
1 Summary of device errata
The following table gives a quick reference to the STM32L496xx/4A6xx device limitations and their status:
A = limitation present, workaround available
N = limitation present, no workaround available
P = limitation present, partial workaround available
“-” = limitation absent
Applicability of a workaround may depend on specific conditions of target application. Adoption of a workaround
may cause restrictions to target application. Workaround for a limitation is deemed partial if it only reduces the
rate of occurrence and/or consequences of the limitation, or if it is fully effective for only a subset of instances on
the device or in only a subset of operating modes, of the function concerned.
Table 3. Summary of device limitations
Function Section Limitation
Status
Rev. B
Core
2.1.1 Interrupted loads to SP can cause erroneous behavior A
2.1.2
VDIV or VSQRT instructions might not complete correctly when very short ISRs
are used
A
2.1.3
Store immediate overlapping exception return operation might vector to
incorrect interrupt
A
System
2.2.1
PCPROP area within a single flash memory page becomes unprotected at RDP
change from Level 1 to Level 0
A
2.2.2 MSI frequency overshoot upon Stop mode exit A
2.2.3
Internal voltage reference corrupted upon Stop mode entry with temperature
sensing enabled
A
2.2.4 Spurious brown-out reset after short run sequence A
2.2.5 Full JTAG configuration without NJTRST pin cannot be used A
2.2.6
Current injection from V
DD
to V
DDA
through analog switch voltage booster
A
2.2.7
Both GPIOI and GPIOH pull-up or pull-down activation is done through
PWR_PUCRH or PWR_PDCRH registers
P
2.2.8
Dual-bank boot not working when the boot in flash memory is selected by
BOOT0 pin
A
2.2.9 Dual-bank boot fails with stack pointer placed within aliased SRAM2 A
2.2.10 Unstable LSI when it clocks RTC or CSS on LSE P
2.2.11
FLASH_ECCR corrupted upon reset or power‑down occurring during flash
memory program or erase operation
A
2.2.12 LSE crystal oscillator may be disturbed by transitions on PC13 N
2.2.13 SRAM write error A
2.2.14
Corrupted content of the backup domain due to a missed power-on reset after
this domain supply voltage drop
A
2.2.15 Data cache might be corrupted during flash memory read-while-write operation A
2.2.16
V
DDA
overconsumption under specific condition on PA3 or PB0
N
FW
2.3.1 Code segment unprotected if non-volatile data segment length is zero A
2.3.2 Code and non-volatile data unprotected upon bank swap A
DMA 2.4.1
DMA disable failure and error flag omission upon simultaneous transfer error
and global flag clear
A
FMC
2.5.1 Dummy read cycles inserted when reading synchronous memories N
STM32L496xx STM32L4A6xx
Summary of device errata
ES0335 - Rev 19
page 2/53